? 2008 ixys corporation,all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 800 v v dgr t j = 25 c to 150 c, r gs = 1m 800 v v gss continuous 30 v v gsm transient 40 v i d25 t c = 25 c38a i dm t c = 25 c, pulse width limited by t jm 150 a i a t c = 25 c38a e as t c = 25 c4j dv/dt i s i dm , v dd v dss , t j 150 c 20 v/ns p d t c = 25 c 735 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6mm (0.062 in.) from case for 10s 300 c t sold plastic body for 10s 260 c v isol 50/60 hz, rms t = 1min 2500 v~ i isol 1ma t = 1s 3000 v~ m d mounting torque (to-264) 1.5/13 nm/lb.in. terminal connection torque (sot-227b) 1.3/11.5 nm/lb.in. f c mounting force (plus247) 20..120 /4.5..27 n/lb. weight to-264 10 g plus247 6 g sot-227b 30 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 3ma 800 v v gs(th) v ds = v gs , i d = 8ma 3.0 5.5 v i gss v gs = 30v, v ds = 0v 200 na i dss v ds = v dss 50 a v gs = 0v t j = 125 c 2 ma r ds(on) v gs = 10v, i d = 0.5 ? i d25 , note 1 220 m ixfk38n80q2 ixfn38n80q2 ixfx38n80q2 v dss = 800v i d25 = 38a r ds(on) 220m t rr 250ns ds99150b(5/08) n-channel enhancement mode avalanche rated, high dv/dt, low q g low intrinsic r g , low t rr features ? double metal process for low gate resistance ? international standard packages ? epoxy meet ul 94 v-0, flammability classification ? avalanche energy and current rated ? fast intrinsic rectifier ? miniblock package version with aluminum nitrate isolation advantages ? easy to mount ? space savings ? high power density hiperfet tm power mosfets q2-class g = gate d = drain s = source tab = drain g d s s minibloc, sot-227 b (ixfn) e153432 to-264 (ixfk) s g d (tab) plus247 (ixfx) (tab) either source terminal s can be used as the source terminal or the kelvin source (gate return) terminal.
ixys reserves the right to change limits, test conditions, and dimensions. ixfk38n80q2 ixfn38n80q2 ixfx38n80q2 symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 0.5 ? i d25 , note 1 25 37 s c iss 9500 pf c oss v gs = 0v, v ds = 25v, f = 1mhz 888 pf c rss 185 pf t d(on) resistive switching times 20 ns t r v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 16 ns t d(off) r g = 1 (external) 60 ns t f 12 ns q g(on) 190 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 44 nc q gd 88 nc r thjc 0.17 c/w r thcs 0.15 c/w source-drain diode characteristic values t j = 25 c unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0v 38 a i sm repetitive, pulse width limited by t jm 150 a v sd i f = i s , v gs = 0v, note 1 1.5 v t rr 250 ns q rm 1 c i rm 10 a note 1: pulse test, t 300 s; duty cycle, d 2%. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 to-264 (ixfk) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. terminals: 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) plus247 tm (ixfx) outline dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 0.244 r 4.32 4.83 .170 .190 i f = 25a, -di/dt = 100a/ s v r = 100v, v gs = 0v sot-227b outline
? 2008 ixys corporation,all rights reserved ixfk38n80q2 ixfn38n80q2 ixfx38n80q2 fig. 2. extended output characteristics @ 25 o c 0 10 20 30 40 50 60 70 80 90 036912151821242730 v d s - volts i d - amperes v gs = 10v 7v 5v 5.5v 6v fig. 3. output characteristics @ 125 o c 0 5 10 15 20 25 30 35 40 02468101214161820 v d s - volts i d - amperes v gs = 10v 6v 5v 5.5v fig. 1. output characteristics @ 25 o c 0 5 10 15 20 25 30 35 40 012345678910 v d s - volts i d - amperes v gs = 10v 6v 5v 5.5v fig. 4. r ds(on ) normalized to 0.5 i d25 v alue vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r d s ( o n ) - normalized i d = 38a i d = 19a v gs = 10v fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 5. r ds(on) normalized to 0.5 i d25 value vs. i d 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 0 102030405060708090 i d - amperes r d s ( o n ) - normalized t j = 125oc t j = 25oc v gs = 10v
ixys reserves the right to change limits, test conditions, and dimensions. ixfk38n80q2 ixfn38n80q2 ixfx38n80q2 fig. 11. capacitance 100 1000 10000 100000 0 5 10 15 20 25 30 35 40 v d s - volts capacitance - picofarads c iss c oss c rss f = 1mhz fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 120 140 160 180 200 q g - nanocoulombs v g s - volts v ds = 400v i d = 19a i g = 10ma fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 3.5 4.0 4.5 5.0 5.5 6.0 6.5 v g s - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 125oc 25oc fig. 9. source current vs.source-to-drain voltage 0 10 20 30 40 50 60 70 80 90 100 110 120 0.40.50.60.70.80.91.01.11.21.3 v s d - volts i s - amperes t j = 125oc t j = 25oc fig. 12. forward-bias safe operating area 1 10 100 1000 10 100 1000 v d s - volts i d - amperes 100s 1ms dc r ds(on) limi t 10ms 25s t j = 150oc t c = 25oc single pulse
? 2008 ixys corporation,all rights reserved ixys ref: f_38n80q2(94)5-28-08-a ixfk38n80q2 ixfn38n80q2 ixfx38n80q2 fig. 13. maximum transient thermal impedance 0.01 0.10 1.00 1 10 100 1000 pulse width - milliseconds z ( t h ) j c - oc / w
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